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330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch

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330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch

  • 330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch
  • 330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch
  • 330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch
  • 330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch
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330um Thickness 4H-N Type SiC Substrate Production Grade Dia50.8mm 2inch

2inch dia50.8mm 330μm thickness 4H-N Type SiC substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch ...

Product Tags:

SBD Device SiC Substrate

      

330um Thickness SiC Substrate

      

Production Grade Silicon Carbide Substrate

      
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